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Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP

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5 Author(s)
Artus, L. ; Insitut Jaume Almera, Consell Superior d’Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n., 08028 Barcelona, Spain ; Cusco, R. ; Ibanez, J. ; Martin, J.M.
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We have studied the lattice recovery by rapid thermal annealing of Si+-implanted InP using Raman spectroscopy. The crystallinity recovery for different annealing temperatures of samples totally amorphized by the implantation can be monitored by means of their Raman spectra. However, free-charge coupling with the LO mode and possible misorientation of the recrystallized material may alter substantially the first-order Raman spectrum, making it unreliable for a good characterization of the lattice recovery. The study of second-order Raman spectrum overcomes the problems present in the analysis of first-order Raman spectrum and provides suitable criteria to assess the recrystallization of the implanted and annealed samples. After rapid thermal annealing at 875 °C for 10 s, the intensity of the second-order peaks approaches 70% of its value in virgin InP, and third-order Raman peaks are also clearly detected, evidencing the good lattice recovery achieved. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:82 ,  Issue: 8 )

Date of Publication:

Oct 1997

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