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Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

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7 Author(s)
Kim, H. ; Department of Materials Science, Coordinated Science Laboratory, and Materials Research Laboratory, University of Illinois, 1101 West Springfield, Urbana, Illinois 61801 ; Glass, G. ; Spila, T. ; Taylor, N.
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B-doped Si(001) films, with concentrations CB up to 1.7×1022cm-3, were grown by gas-source molecular-beam epitaxy from Si2H6 and B2H6 at Ts=500–800 °C. D2 temperature-programed desorption (TPD) spectra were then used to determine B coverages θB as a function of CB and Ts. In these measurements, as-deposited films were flash heated to desorb surface hydrogen, cooled, and exposed to atomic deuterium until saturation coverage. Strong B surface segregation was observed with surface-to-bulk B concentration ratios ranging up to 1200. TPD spectra exhibited β2 and β1 peaks associated with dideuteride and monodeuteride desorption as well as lower-temperature B-induced peaks β2* and β1*. Increasing θB increased the area under β2* and β1* at the expense of β2 and β1 and decreased the total D coverage θD. The TPD results were used to determine the B segregation enthalpy, -0.53 eV, and to explain and model the effects of high - B coverages on Si(001) growth kinetics. Film deposition rates R increase by ≥50% with increasing CB≫~1×1019 cm-3 at Ts≤550 °C, due primarily to increased H desorption rates from B-backbonded Si adatoms, and decrease by corresponding amounts at Ts≥600 °C due to decreased adsorption site densities. At Ts≥700 °C, high B coverages also induce {113} facetting. © 1997 American Institute of Physics.  

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Journal of Applied Physics  (Volume:82 ,  Issue: 5 )