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Epitaxial growth of ZnS on bare and arsenic-passivated vicinal Si(100) surfaces

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3 Author(s)
Zhou, Xiaochuan ; NanoFAB Center, Engineering-Physics Building, Texas A&M University, College Station, Texas 77843-4242 ; Jiang, Shan ; Kirk, W.P.

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We report a detailed study of molecular beam epitaxial growth of ZnS films on bare and arsenic-passivated vicinal Si(100) surfaces. This study elucidates the initiation of microtwinning and stacking-fault defects on double-stepped substrate surfaces. The study also sheds light on the function of arsenic passivation in reducing crystal defects in ZnS epitaxial layers. Three substrate surfaces, Si(100) 2×1, Si(100):As 2×1, and Si(100):As 1×2, were used for the ZnS epitaxial growth studies. Adsorption experiments were performed to demonstrate the chemical passivation effect of an arsenic overlayer. Reflection high-energy electron diffraction was used to study growth modes and the epitaxial relationship of the ZnS layers to the substrates. Transmission electron microscopy was used to study the crystal-defect structures. Secondary ion mass spectroscopy was used to determine the chemical profiles of the heteroepitaxial interfaces of ZnS layers grown on arsenic-passivated surfaces. One of the main results demonstrated by this work is that thin ZnS films can be grown epitaxially with much better crystal quality on As-passivated Si surfaces than on bare Si surfaces. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:82 ,  Issue: 5 )