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A study on interface and charge trapping properties of nitrided n-channel metal-oxide-semiconductor field-effect transistors by backsurface argon bombardment

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4 Author(s)
Lai, P.T. ; Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong ; Xu, J.P. ; Lo, H.B. ; Cheng, Y.C.

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A low-energy (550 eV) argon-ion beam was used to directly bombard the backsurface of nitrided n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) after the completion of all conventional processing steps. The interface and oxide-charge trapping characteristics of the bombarded MOSFETs were investigated as compared to nonbombarded and reoxidized-nitrided n-MOSFETs. It was found that after bombardment, interface state density decreases and interface hardness against hot-carrier bombardment enhances, and oxide charge trapping properties were also improved. The improvements exhibit a turnaround behavior depending on bombardment conditions and could be attributed to stress compensation in the vicinity of the Si/SiO2 interface and an annealing effect. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:82 ,  Issue: 4 )

Date of Publication:

Aug 1997

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