By Topic

Study of damage induced by room-temperature Al ion implantation in Hg0.8Cd0.2Te by x-ray diffuse scattering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
8 Author(s)
Renault, P.O. ; Laboratoire de Métallurgie Physique, UMR 6630-CNRS, Université de Poitiers, UFR Sciences, SP2MI, Bd. 3, Téléport 2, B.P. 179, 86960 Futuroscope Cédex, France ; Declemy, A. ; Leveque, P. ; Fayoux, C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.365588 

Ion-implantation is a widely used doping technique in II–VI semiconductors. Nevertheless, ion-implantation damage has to be better understood to properly control this process. In order to investigate the implantation-induced defects in such compounds, room-temperature implantations of 320 keV Al ions have been performed on crystalline samples of [111] Hg1-xCdxTe (x≈20%) for doses ranging from 1013 to 1015cm-2. We report the first measurements of x-ray diffuse scattering close to different Bragg reflections on such as-implanted samples. The evolution of the diffuse intensity as a function of the dose has been observed. The defect-induced diffuse intensity arises mainly from interstitial dislocation loops. Nevertheless, vacancy loops are observed above 3×1014Al/cm2. The mean radius of the dislocation loops increases in size by three to four times when the dose rises from 1013 to 1015cm-2. Finally, the saturation of point defects has been observed independently of their clustering at about 5×1013Al/cm2, that is in the same range as the saturation dose of the sheet electron concentration. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:82 ,  Issue: 2 )