By Topic

An improved analysis of admittance data for high resistivity materials by a nonlinear regularization method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Winterhalter, J. ; Albert-Ludwigs-Universität, Freiburger Materialforschungszentrum Stefan-Meier-Strasse 21, D-79104 Freiburg im Breisgau, Germany ; Ebling, D.G. ; Maier, D. ; Honerkamp, J.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Admittance data of GaAs Schottky diodes are analyzed in order to calculate the activation energy and the cross section of deep levels. An improved model for high resistivity semiconductor material is introduced. In this model the admittance depends nonlinearly on the distribution of the relaxation times of the deep levels and on material parameters like the resistivity, the barrier height, and the band gap of the semiconductor. The reconstruction of a continuous distribution and of the parameters from experimental admittance data is an ill-posed inverse problem which is solved by a nonlinear regularization procedure. The method is used to analyze the deep levels and the semiconducting properties of a semi-insulating GaAs diode. Values for the resistivity, the barrier height, and the band gap could be confirmed and deep levels with activation energy in the range of 0.5–0.72 eV were determined to be electrical active. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:82 ,  Issue: 11 )