Cart (Loading....) | Create Account
Close category search window
 

Enhanced crystallization of amorphous Si containing hydrogen without oxygen during ion-beam irradiation at 310 °C and during furnace annealing below 450 °C

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Nakata, Jyoji ; NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa-ken, 243-01, Japan

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.366459 

The epitaxial crystallization rates of amorphous Si layers on crystalline Si substrates containing a considerable number of hydrogen atoms are markedly increased in the absence of oxygen atoms. This enhanced crystallization occurs both during 1-MeV Xe-ion-beam irradiation at 310 °C and during furnace annealing in vacuum at temperatures below 450 °C. Implantation-amorphized crystal Si layers epitaxially grown on the (100)-crystalline Si substrates by ultrahigh vacuum chemical vapor deposition (UHV-CVD) are epitaxially crystallized by furnace annealing in vacuum at temperatures below 450 °C. Implantation-amorphized bulk-crystal Si substrates, however, are not entirely crystallized by the same low-temperature annealing. Nanometer-scale microcrystallites, remaining at the near-surface region in the amorphous Si layer after 80-keV phosphorus implantation into the UHV-CVD epitaxial Si layer, grow three-dimensional during 1-MeV Xe-ion-beam irradiation at 310 °C, but not during furnace annealing at 600 °C in dry Ar ambient. This three-dimensional crystal growth does not occur in implantation-amorphized bulk-crystal Si substrates, even during 1-MeV Xe-ion-beam irradiation. Amorphous Si layers directly deposited by low-pressure CVD (LP-CVD) are crystallized epitaxially by 1-MeV Xe-ion-beam irradiation at 310 °C. The crystallization rate of the LP-CVD sample heated in the deposition furnace after evacuation is twice as high as that of the sample heated before evacuation. All these results are explained consistently by the presence of a considerable amount of hydrogen in polyhydride states in the amorphous Si layers in the absence of oxygen. It is suggested that the mechanism of low-temperature crystallization of amorphous Si containing hydrogen atoms in polyhydride states is closely related, in terms of vacant spaces and dangling-bonds, to the mechanism of ion-beam-induced epitaxial crystalliza- tion. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:82 ,  Issue: 11 )

Date of Publication:

Dec 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.