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Charge transport in strained Si1-yCy and Si1-x-yGexCy alloys on Si(001)

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2 Author(s)
Osten, H.J. ; Institute for Semiconductor Physics, Walter-Korsing-Strasse 2, 15230 Frankfurt(Oder), Germany ; Gaworzewski, P.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.366364 

We have investigated the temperature dependencies of charge carrier densities and Hall mobilities in tensile strained Si1-yCy and in compressively strained Si1-x-yGexCy layers. In both cases, the measured charge carrier densities at room temperature are not affected substantially by the addition of a small concentration of carbon (≪1%) under identical growth conditions and dopant fluxes. The measured Hall mobilities monotonically decrease with increasing carbon content for electrons in Si1-yCy, and for holes in Si1-x-yGexCy, respectively. Our results indicate that electrically active defects are formed with the addition of carbon. These defects are presumably connected with carbon/Si interstitials or other C-related complexes. It seems to be difficult to attribute the formation of those electrically active defects solely to contaminations originating from the used carbon evaporation source. We observed that donor- and acceptor-like defects are formed in Si1-yCy as well as in Si1-x-yGexCy layers with roughly a constant ratio, independent of source temperature. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:82 ,  Issue: 10 )

Date of Publication:

Nov 1997

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