Cart (Loading....) | Create Account
Close category search window
 

Photoluminescence processes in Si1-xGex/Si disordered superlattices grown on Si(001) substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wakahara, Akihiro ; Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan ; Kuramoto, Kyosuke ; Hasegawa, Toshimichi ; Noda, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.365825 

Photoluminescence (PL) properties of Si1-xGex/Si disordered superlattices (d-SLs) are investigated. Two types of d-SLs with various Ge compositions (x≪0.55) and various averaged superlattice periods are grown for experiments. The PL intensity ratio I(d-SL)/I(o-SL), the redshift energy, and the characteristic temperature T0 are strongly affected with Ge composition variation but not with averaged superlattice period variation. Small improvement of the ratio of no-phonon (NP)/TO-phonon assisted PL intensities by the Si1-xGex/Si disordered structure suggests that the disorder effect on the increase in NP recombination probability is not as large as expected by other disordered superlattices. The reasons are (1) the weak electron localization and (2) the difference in the directions between momentum ambiguity caused by the localization and the momentum required for recombination. Thus, improved PL properties for SiGe/Si d-SL are mainly owing to the strong hole localization by increased valence-band offset. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:82 ,  Issue: 1 )

Date of Publication:

Jul 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.