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Defects in metamorphic InxAl1-xAs (x≪0.4) epilayers grown on GaAs substrates

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4 Author(s)
Jia-Lin Shieh ; Department of Electrical Engineering, National Central University, Chung-Li, Taiwan 32054, Republic of China ; Mao-Nan Chang ; Cheng, Yung-Shih ; Jen-Inn Chyi

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Defects in Si-doped InxAl1-xAs (0≪x≪0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in InxAl1-xAs grown by molecular beam epitaxy. Their energy levels can be extrapolated from those in the InxAl1-xAs/InP system. A low-temperature-grown buffer layer as well as thermal annealing were found to be capable of reducing the defects in the active layer effectively. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:82 ,  Issue: 1 )

Date of Publication:

Jul 1997

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