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The infrared vibrational absorption spectrum of the Si–X defect present in heavily Si doped GaAs

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3 Author(s)
Ashwin, M.J. ; Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ, United Kingdom ; Newman, R.C. ; Muraki, K.

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Heavily silicon doped GaAs grown by molecular beam epitaxy using a single gallium isotope source (69Ga) has been studied by infrared absorption to reveal localized vibrational modes (LVMs) of Si complexes. The structure observed close to 367 cm-1 is the same as that present in normal GaAs:Si spectra and does not result from mixed Ga isotopes. The electron trap Si–X gives three LVMs at 368.4, 370.0, and 399.6 cm-1, typical of second neighbor donor-acceptor pairs, but inconsistent with a previous proposal that its structure is the planar defect VGaSiAs–AsGa. It is now suggested that the defect is a perturbed SiGaVGa center, involving a second Si atom or a second vacancy. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:82 ,  Issue: 1 )