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Tunneling and impact ionization at high electric fields in abrupt GaAs p-i-n structures

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3 Author(s)
Benz, C. ; Lehrstuhl für Allgemeine Elektrotechnik und Angewandte Elektronik der Technischen Universität München, Arcisstrasse 21, D-80290 München, Germany ; Claassen, M. ; Liebig, D.

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GaAs p-i-n structures with very abrupt doping transitions and different lengths of the quasi-intrinsic zone have been fabricated by molecular beam epitaxy technology. For structures with ultra-thin intrinsic zones, tunnel currents were determined experimentally up to electric fields of 1.9 MV/cm, in good agreement with a modified Kane model. The difference of calculated tunnel current and measured total current in structures which also perform impact ionization is used to fit a Monte Carlo simulation program at high electric fields. Resulting idealized homogeneous-field ionization rates are given which are experimentally verified up to fields of 1.3 MV/cm. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:81 ,  Issue: 7 )