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Properties of ultra-thin lead zirconate titanate thin films prepared by ozone jet reactive evaporation

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5 Author(s)
Torii, K. ; Central Research Laboratory, Hitachi, Limited, 1-280 Higashi koigakubo, Kokubunji, 185, Tokyo, Japan ; Kawakami, Hirosi ; Miki, Hiroshi ; Kushida, Keiko
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Lead zirconate titanate (PZT) thin films were prepared by reactive coevaporation with high-concentration ozone. PZT thin films that demonstrate the highest charge storage density (280 fC/μm2 at 1.5 V for 75-nm-thick film) yet reported have been fabricated. No fatigue was observed after 1011 polarization switching cycles even though a Pt electrode is used. A low leakage current of ≪10-7 A/cm2 at 1.5 V was attained. These PZT films are promising candidates of an alternative capacitor dielectric for dynamic random access memory (DRAM) and ferroelectric nonvolatile memories. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:81 ,  Issue: 6 )

Date of Publication:

Mar 1997

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