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Molecular beam epitaxy of InSb on Si substrates using fluoride buffer layers

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7 Author(s)
Liu, W.K. ; Department of Physics and Astronomy and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019 ; Winesett, J. ; Ma, Weiluan ; Zhang, Xuemei
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The molecular beam epitaxy of InSb/Si structures was accomplished using group IIa fluoride buffer layers. InSb growth was initiated by opening the In and Sb shutters simultaneously at substrate temperatures between 300 °C and 400 °C, producing In-terminated InSb(111)-A surfaces on CaF2/Si(111) substrates. Reflection high-energy electron diffraction, electron channeling, and high resolution x-ray diffraction measurements indicated that the InSb layers were of good crystalline quality. Electron mobilities at room temperature were as high as 65 000 cm2/V s for an 8-μm-thick InSb layer grown on CaF2/Si(111). On CaF2/Si(001) substrates, the InSb layers grew in the (111) orientation with two domains 90° apart. These InSb layers and ones grown on BaF2/CaF2/Si(111) substrates exhibited inferior electrical and structural properties compared to structures grown on CaF2/Si(111) substrates. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:81 ,  Issue: 4 )