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Origin of infrared bands in neutron-irradiated silicon

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3 Author(s)
Sarlis, N.V. ; Department of Physics, Solid State Section, University of Athens, Panepistimiopolis, Zografos, Athens 157 84, Greece ; Londos, C.A. ; Fytros, L.G.

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Infrared absorption measurements were made of the localized vibrational modes due to defects produced in Czochralski-grown Si material after irradiation with fast neutrons and subsequent thermal treatments. The investigation was focused, in particular, on three satellite bands in the region of the A center, located at 839, 833 and 824 cm-1 respectively, the annealing behavior of which was carefully monitored. Correlation of our results with previous infrared, electron paramagnetic resonance and positron annihilation studies favors attributing these bands to the V2O, V3O2 and V2O2 defects respectively. In addition, semiempirical calculations were carried out for the vibrational frequencies of these defects, and the predicted values are in agreement with the above assignments. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:81 ,  Issue: 4 )