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Exchange interaction effect on the dark current in n-type AlxGa1-xAs/GaAs multiple quantum wells infrared detectors

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2 Author(s)
Huang, Danhong ; Phillips Laboratory (PL/VTRP), 3550 Aberdeen Avenue Southeast, Building 426, Kirtland Air Force Base, New Mexico 87117 ; Manasreh, M.O.

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A many-body model based on the self-consistent screened Hartree–Fock approximation is used to study the electron-electron exchange interaction effect on the dark current in n-type AlxGa1-xAs/GaAs multiple quantum wells infrared detectors. This is accomplished by taking the difference between the dark current calculated from the single-particle model and that obtained from the many-body model. This difference is found to be independent of the electron mobility and the saturation velocity. The difference in the dark current was studied as a function of the bias voltage, doping concentration, and temperature. The results predict that the dark current obtained from the single-particle model is overestimated as much as an order of magnitude at low temperatures and high doping concentrations.© 1997 American Institute of Physics.  

Published in:

Journal of Applied Physics  (Volume:81 ,  Issue: 3 )