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Growth, structure and electrical properties of epitaxial thulium silicide thin films on silicon

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3 Author(s)
Travlos, A. ; Institute of Materials Science, National Centre for Scientific Research “Demokritos,” Athens, Greece 15310 ; Salamouras, N. ; Boukos, N.

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Thulium silicide thin films were grown on (100) and (111) Si by evaporation of Tm metal and Si layers and annealing in a vacuum. Electron microscopy and x-ray diffraction results showed that the TmSi2-x layers are of high crystalline quality grown epitaxially on Si. Electrical resistivity measurements showed that TmSi2-x layers are metallic exhibiting magnetic ordering below 3 K. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:81 ,  Issue: 3 )

Date of Publication:

Feb 1997

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