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Predicting the crystallization temperature variation with composition for amorphous silicon-based binary alloy thin films

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5 Author(s)
Carlsson, J.R.A. ; Department of Physics, Thin Film Physics Division, Linköping University, S-581 83 Linköping, Sweden ; Sundgren, J.‐E. ; Li, X.‐H. ; Madsen, L.D.
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A semi-empirical model for predicting the crystallization temperature variation with composition for amorphous Si-based binary alloys is presented. Based on the calculated heat of formation, ΔHfor, Si-based amorphous alloys are proposed to crystallize according to one of three classes: Si-nonmetal, Si-nonreactive metal (ΔHfor⩾0) or Si-reactive metal (ΔHfor≪0) alloy systems. For all three classes, the variation in ΔHfor with composition is also used to qualitatively predict the concentration dependence of the crystallization temperature, Tc. The validity of the model was investigated by comparing the predicted concentration dependence of Tc with our own experimental results as well as with available literature data. It was found that the model explains the qualitative crystallization temperature variation with composition well for the hitherto studied amorphous Si-based binary alloy systems. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:81 ,  Issue: 3 )