Cart (Loading....) | Create Account
Close category search window
 

Photoluminescence measurement of InGaN and GaN grown by a gas-source molecular-beam epitaxy method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Yoshida, S. ; Optoelectronics Technology Research Laboratory, 5-5, Tohkodai, Tsukuba, Ibaraki, 300-25 Japan

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.365398 

GaN and InxGa1-xN were grown using a gas-source molecular-beam epitaxy method. Sapphire substrates were used for GaN growth. Ammonia (NH3) gas was used as the nitrogen source gas. As a result, GaN and InxGa1-xN crystals with mirror surfaces were obtained using uncracked ammonia gas. Photoluminescence measurements of InxGa1-xN and GaN were investigated. No deep-level emission was observed and only the band-edge emission spectra of InxGa1-xN and Si-doped GaN crystals were observed. It was confirmed that, in the case of undoped GaN growth, the yellow luminescence disappeared upon increasing the V/III flux ratio. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:81 ,  Issue: 12 )

Date of Publication:

Jun 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.