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Photoluminescence measurement of InGaN and GaN grown by a gas-source molecular-beam epitaxy method

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1 Author(s)
Yoshida, S. ; Optoelectronics Technology Research Laboratory, 5-5, Tohkodai, Tsukuba, Ibaraki, 300-25 Japan

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GaN and InxGa1-xN were grown using a gas-source molecular-beam epitaxy method. Sapphire substrates were used for GaN growth. Ammonia (NH3) gas was used as the nitrogen source gas. As a result, GaN and InxGa1-xN crystals with mirror surfaces were obtained using uncracked ammonia gas. Photoluminescence measurements of InxGa1-xN and GaN were investigated. No deep-level emission was observed and only the band-edge emission spectra of InxGa1-xN and Si-doped GaN crystals were observed. It was confirmed that, in the case of undoped GaN growth, the yellow luminescence disappeared upon increasing the V/III flux ratio. © 1997 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:81 ,  Issue: 12 )

Date of Publication:

Jun 1997

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