Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.364080
ZnSe/ZnMgSSe multiple quantum wells (MQWs) were fabricated by compound-source molecular beam epitaxy on GaAs epitaxial buffer layers. X-ray diffraction and photoluminescence revealed that the MQWs had excellent crystalline quality and optical properties. The roughness of the interface is less than an atomic layer. The exciton-longitudinal-optical phonon coupling constant is the same as that of ZnSe. Binding energy of a biexciton is such large value as 20 meV due to the quantum confinement effect. © 1997 American Institute of Physics.
Published in:
Journal of Applied Physics
(Volume:81
,
Issue:
1
)
Date of Publication: Jan 1997
- Page(s):
- 456 - 460
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.364080
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Jan 1997
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
