By Topic

Atomic force microscopy growth modeling of SiC buffer layers on Si(100) and quality optimization

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Ferro, G. ; Laboratoire des Multimatériaux et Interfaces, UMR No. 5615, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne, France ; Monteil, Y. ; Vincent, H. ; Thevenot, V.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The effect of various growth conditions has been studied in order to modelize and optimize the SiC buffer layers obtained by reactive chemical‐vapor deposition (RCVD) on Si(100) substrates. First, thermodynamic calculations have been carried out on the Si–H2–CxHyClz system to simulate the RCVD process and to foresee the nature and the evolution of the deposit with varying parameters. The experiments have confirmed some of the thermodynamic results, such as the carbon deposition in specific conditions, and brought out complementary information on the kinetics point of view. Due to our low heating up rate, no SiC island formation was characterized at the early stage of growth. The obtained SiC layers are ultrathin with a very particular morphology. We propose a new model of growth based on atomic force microscopy observations to explain the resulting morphology. The optimal conditions have been deduced to elaborate ultrathin, smooth, and monocrystalline β‐SiC buffer layers. © 1996 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:80 ,  Issue: 8 )