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MeV P ion implantation damage and rapid thermal annealing effects in Fe‐doped InP using Raman scattering

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4 Author(s)
Shi, Bo‐Rong ; Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong ; Cue, Nelson ; Xu, Tian‐Bing ; Au, Standey

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The damage in Fe‐doped InP induced by 1.0 MeV P ion implantation with doses ranging from 5×1013 to 2×1015 cm-2 and effects of rapid thermal annealing (RTA) in the range of 700‐1050 °C were investigated by means of Raman scattering. The shift and asymmetrical broadening of the longitudinal optical phonon peak (LO) and the appearance of a transverse optical mode (TO) show that the Raman scattering is very sensitive to implantation damage. For doses larger than 5×1014 cm-2, the TO and LO peaks were markedly broadened, even merged into a single peak, indicating an amorphous structure in the near surface region. Much of the primary damage can be annealed out after RTA at 800 °C for all implantation doses. For RTA below 900 °C, the residual damage decreased with increasing annealing temperature for the low dose case of 1×1014 cm-2, but increased for the high dose case of 2×1015 cm-2. Only when the annealing temperature is over 900 °C, the residual defects of the high dose case drastically decrease, and nearly full recovery is obtained when the annealing temperature is raised to 1000–1050 °C. © 1996 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:80 ,  Issue: 4 )

Date of Publication:

Aug 1996

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