Observation of 〈100〉 misfit dislocations in In0.06Ga0.94As/GaAs heterostructure by synchrotron radiation topography

〈100〉 oriented misfit dislocations in In0.06Ga0.94As/GaAs heterostructures with relatively low misfit f (f=0.0043) have been observed by synchrotron radiation topography. InGaAs samples consist of 2500, 4000, and 6500 Å thick In0.06Ga0.94As layers grown by molecular beam epitaxy at 580 °C. All the topographs were taken by synchrotron radiation double crystal topography. The panchromatic cathodoluminescence complementary technique in the scanning electron microscope was also applied. Misfit dislocations lying along both 〈100〉 and 〈110〉 directions have been observed. The dislocations parallel to 〈100〉 directions have much lower density and extension in length than those aligned along the 〈110〉 directions. The climb mechanism of the generation of dislocations, probably due to the high density of point defects during the high temperature growth, is discussed. © 1996 American Institute of Physics.