Cart (Loading....) | Create Account
Close category search window
 

The influence of chemisorption on the defect equilibrium of metal oxide thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Geistlinger, H. ; Centre for Environmental Research Leipzig‐Halle Ltd., PF 2, D‐04301 Leipzig, Germany

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.362936 

Using the exact charge density of intrinsic point defects of metal oxides (MOs), the phenomenological electron theory of chemisorption, developed by Volkenstein, is applied to acceptorlike and donorlike chemisorption on MO thin films for the whole ξ region (where ξ=D/LD, D is the film thickness, and LD is Debye length). The experimental temperature and oxygen partial pressure dependence of the averaged electron concentration 〈n〉(pO2,T)∝e-EA/kTpO2-m( T) for polycrystalline ZnO films are discussed on the bases of three different models: the Schottky‐defect model, the Volkenstein model for electronic equilibrium, and the comprehensive model for complete equilibrium. It turns out that a Schottky‐defect model that uses single‐crystal‐mass action constants will not yield the experimental high temperature limit (T=1000 K: EA=1.6 eV, m=0.26). This limit is obtained using a higher averaged concentration of oxygen vacancies for polycrystalline films (due to the presence of grain boundaries). The comparison between the electronic and complete equilibrium shows that the screening of the surface charge through mobile positively charged oxygen vacancies has a tremendous reducing effect of about 30% of the surface potential in the temperature range considered. © 1996 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:80 ,  Issue: 3 )

Date of Publication:

Aug 1996

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.