By Topic

Characterization of lattice spacing and inclination around cells in liquid‐encapsulated Czochralski GaAs crystals using a 100×100 μm2 incident x‐ray beam

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Usuda, K. ; Research and Development Center, Toshiba Corporation 1, Komukai Toshiba‐cho, Saiwai‐ku, Kawasaki 210, Japan ; Ando, M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.362934 

Lattice spacing and inclination around cells were investigated precisely for both undoped high etch‐pit‐densities (EPD) liquid‐encapsulated Czochralski (LEC) GaAs crystal of the order of 104 cm-2 and undoped As‐ambient LEC (As‐LEC) crystal of low EPD of the order of 103 cm-2. Measurement of the lattice spacing and the inclination was carried out by the triple crystal method using a 100×100 μm2 size incident beam of high‐intensity synchrotron radiation. It was revealed that the lattice spacing varied by almost Δd, on the order of 10-4 Å, due to the cellular structure of the high EPD crystal. In addition, the low EPD GaAs crystal grown by the As‐LEC method showed considerably less variation in lattice spacing and inclination than the high EPD LEC GaAs crystal. © 1996 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:80 ,  Issue: 3 )