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Lattice spacing and inclination around cells were investigated precisely for both undoped high etch‐pit‐densities (EPD) liquid‐encapsulated Czochralski (LEC) GaAs crystal of the order of 104 cm-2 and undoped As‐ambient LEC (As‐LEC) crystal of low EPD of the order of 103 cm-2. Measurement of the lattice spacing and the inclination was carried out by the triple crystal method using a 100×100 μm2 size incident beam of high‐intensity synchrotron radiation. It was revealed that the lattice spacing varied by almost Δd, on the order of 10-4 Å, due to the cellular structure of the high EPD crystal. In addition, the low EPD GaAs crystal grown by the As‐LEC method showed considerably less variation in lattice spacing and inclination than the high EPD LEC GaAs crystal. © 1996 American Institute of Physics.