By Topic

Stress measurements of radio‐frequency reactively sputtered RuO2 thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Hong, Suk-Kyoung ; Department of Inorganic Materials Engineering, Seoul National University, Seoul 151‐742, Korea ; Kim, Hyeong Joon ; Yang, Hong‐Geun

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The stress‐temperature behaviors of RuO2 thin films on (100) Si were investigated by measuring the deflection of film‐coated substrates in situ during thermal cycling between 25 and 700 °C. The average biaxial elastic modulus [E/(1-ν)] and thermal expansion coefficient (α) of RuO2 thin film were also determined using the stress‐temperature curves of the films on both (100) Si and quartz substrates. For this study, RuO2 thin films were deposited by rf magnetron reactive sputtering at the substrate temperature range of 25–450 °C. As‐grown thin films deposited between 300 and 450 °C showed different stress‐temperature behavior, which was caused mainly by the microstructure of the thin films. The values of [E/(1-ν)]RuO2 and αRuO2 were calculated to 3.09×1011 Pa and 10.47×10-6/°C, respectively, in the range of 350–600 °C. The αRuO2 obtained from the stress data was compared with the α value calculated from the thermal expansion coefficient, αa and αc, of RuO2 single crystal. Both values were found to be in good agreement. © 1996 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:80 ,  Issue: 2 )