Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.362889
The mechanism of the negative bias enhanced nucleation of diamond on silicon has been studied by a set of experiments using hot filament chemical vapor deposition. Nucleation enhancement was achieved for experimental configurations either with or without the application of a negative bias to the mirror‐polished Si substrates. The obtained nucleation density ranged from 108 to 1010 cm-2. The as‐deposited films were characterized by scanning electron microscopy and Raman spectroscopy. Our results demonstrate that the electron emission from the diamond coating the substrate holder, which is speculated to greatly increase the concentration of atomic hydrogen and dissociated hydrogen radicals on/near the substrate surface is responsible for the nucleation enhancement during the bias pretreatment. © 1996 American Institute of Physics.