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Unambiguous determination of crystal‐lattice strains in epitaxially grown SiGe/Si multilayers

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3 Author(s)
Nikulin, A.Yu. ; Department of Physics, Monash University, Clayton, Victoria 3168, Australia ; Zaumseil, P. ; Petrashen, P.V.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.363793 

A new method for unambiguous reconstruction of crystal‐lattice strains in epitaxially grown layers from high‐resolution x‐ray diffraction data is proposed. The technique uses x‐ray diffracted intensity profiles collected for two different radiation wavelengths. We enhance the theory for the previously developed algorithm for model‐independent determination of crystal‐lattice strain profiles in single crystals with epitaxially grown top‐surface layers. The method relies on the retrieval of the scattered x‐ray wave phase from its intensity profile via a logarithmic Hilbert transform. This phase‐retrieval technique is always associated with the problem of complex polynomial root finding. A practical procedure for the mapping of complex polynomial roots is proposed to distinguish true and virtual zeros. This allows the phase of the diffracted x‐ray wave to be retrieved unambiguously. The method was applied to determine physical dimensions and concentration composition of a Si/Si1-xGex/Si alloy multilayer structure typical for SiGe heterobipolar transistor device. © 1996 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:80 ,  Issue: 12 )

Date of Publication:

Dec 1996

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