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The effect of excess gallium vacancies in low‐temperature GaAs/AlAs/GaAs:Si heterostructures

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3 Author(s)
Kisielowski, C. ; Department of Materials Science and Mineral Engineering, University of California at Berkeley, Berkeley, California 94720Lawrence Berkeley National Laboratory, Berkeley, California 94720 ; Calawa, A.R. ; Liliental‐Weber, Z.

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This article shows that the presence of low‐temperature‐grown GaAs (LT‐GaAs) in LT‐GaAs/AlAs/GaAs:Si heterostructures increases the Al/Ga interdiffusion at the heterostructure interfaces. The interdiffusion enhancement is attributed to the presence of Ga vacancies (VGa) in the As‐rich LT‐GaAs, which diffuses from a supersaturation of VGa frozen‐in during sample growth. Chemical mapping, which distinguishes between the AlAs and GaAs lattices at an atomic scale, is used to measure the Al concentration gradient in adjacent GaAs:Si layers. A correlation is observed between the Al/Ga interdiffusion and the gate breakdown voltage in metal‐insulator field‐effect transistor structures containing LT‐GaAs. © 1996 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:80 ,  Issue: 1 )