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Co–Cr films prepared by sputtering using electron cyclotron resonance microwave plasma

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4 Author(s)
Yamamoto, S. ; Faculty of Engineering, Yamamaguchi University, Tokiwadai, Ube 755, Japan ; Sato, K. ; Kurisu, H. ; Matsuura, M.

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The sputtering deposition using an electron cyclotron resonance (ECR) microwave plasma was tried to use in the fabrication of the Co–Cr perpendicular magnetic recording media. As the Ar sputtering gas pressure increased from 4×10-2 to 8×10-2 Pa, the Co(002) x‐ray diffraction peak intensity increased and the half‐value width of the rocking curve Δθ50 decreased. This result implies that Co–Cr films with high perpendicular orientation and good crystallinity are achieved at high Ar gas pressure. The Co–Cr films deposited at a target to substrate distance of 230 mm had a good preferred crystal orientation (Δθ50 less than 4°), high perpendicular magnetic anisotropy (Hk higher than 4 kOe), and high perpendicular coercivity over 1400 Oe even though the Co–Cr thickness is as small as about 50 nm, and no underlayers were introduced. Thus, the ECR sputtering has high potential in the deposition of the Co–Cr films for ultrahigh density recording media. © 1996 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:79 ,  Issue: 8 )

Date of Publication:

Apr 1996

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