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We studied the lattice damage caused by Si+ implantation into semi‐insulating InP, with doses in the range of 1012 to 5×1014 cm-2, and the subsequent lattice recovery achieved by rapid thermal annealing (RTA), by means of Raman spectroscopy. With increasing implantation dose, an intensity reduction of the first‐ and second‐order Raman peaks characteristic of crystalline InP is observed, together with the enhancement of disorder‐activated modes. In samples implanted with doses higher than 1014 cm-2 the Raman spectra resembles that of amorphous InP, and the samples can be considered as fully amorphized. By RTA at 875 °C for 10 s, sample crystallinity is recovered, even in the case of those samples implanted with the highest dose. After annealing, the Raman spectra show no evidence of disorder‐activated modes, and the intensity of the characteristic second‐order peaks approaches the value found in unimplanted InP. © 1996 American Institute of Physics.