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Impact of structure on photogating

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2 Author(s)
Bae, Sanghoon ; Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802 ; Fonash, S.J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.361185 

In previous reports, we predicted with computer simulation that photocarriers from blue bias light can contribute under certain conditions to the quantum efficiency in the red wavelength part of the spectrum for hydrogenated amorphous silicon (a‐Si:H) p‐i‐n and Schottky barrier structures. We termed this phenomenon photogating and subsequently experimentally verified its existence by demonstrating red wavelength quantum efficiency≳1 under blue bias light. In this report, we show how device structure affects this photogating and affects the wavelength ranges where it can appear. We show with computer simulations that certain structures can display a complementary phenomenon of blue quantum efficiencies≳1 under red bias light and discuss supporting experimental data. © 1996 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:79 ,  Issue: 5 )