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Evolution of shallow donors with proton fluence in n‐type silicon

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5 Author(s)
Ntsoenzok, E. ; CNRS‐CERI, 3a rue de la Férollerie, 45071 Orléans Cedex, France ; Desgardin, P. ; Saillard, M. ; Vernois, J.
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Bipolar components that consist of p+n junctions have been irradiated by MeV protons at fluences ranging from 1011 to 1013 particles cm-2. Capacitance‐voltage measurements have been used to investigate changes in the carrier concentration profiles. Shallow donors that can induce harmful effects in electronic devices have been studied as a function of fluence, flux, and annealing parameters. © 1996 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:79 ,  Issue: 11 )

Date of Publication:

Jun 1996

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