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Bipolar components that consist of p+n junctions have been irradiated by MeV protons at fluences ranging from 1011 to 1013 particles cm-2. Capacitance‐voltage measurements have been used to investigate changes in the carrier concentration profiles. Shallow donors that can induce harmful effects in electronic devices have been studied as a function of fluence, flux, and annealing parameters. © 1996 American Institute of Physics.