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Interaction characteristics of dislocations in strained epitaxial layers

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1 Author(s)
Shintani, K. ; University of Electro‐Communications, Chofu, Tokyo 182, Japan

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.360928 

In connection with nucleation and multiplication processes of misfit dislocations in epitaxial layers, elastic interactions of some configurations of dislocation surface half‐loops and angular dislocations are investigated. By using the programme code produced by Gosling and Willis [J. Mech. Phys. Solid 42, 1199 (1994)], which calculates the image stresses of a straight dislocation half‐line in a half‐space and enables one to construct the stress field of any configuration of dislocation loops, the interaction energy of two surface half‐loops is obtained. With the change of the relative positions of the two half‐loops, the sign of the interaction energy varies from minus to plus, in accordance with which the interaction force between the two half‐loops varies from an attractive force to a repulsive one. The interaction forces exerted on threading segments are also estimated for two angular dislocations, and their effects on the Matthews and Blakeslee equilibrium are discussed. © 1996 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:79 ,  Issue: 1 )

Date of Publication:

Jan 1996

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