By Topic

Interface roughness of InAs/AlSb superlattices investigated by x‐ray scattering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Jenichen, B. ; Paul‐Drude‐Institut für Festkörperelektronik, Hausvogteiplatz 5‐7, Berlin D‐10117, Germany ; Stepanov, S.A. ; Brar, B. ; Kroemer, H.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

InAs/AlSb short period superlattices grown either with AlAs‐like or with InSb‐like interfaces are investigated by grazing incidence x‐ray scattering and high resolution diffractometry. The superlattices are grown on a relaxed AlSb buffer layer. It is shown that the two possible stackings of layers in the superlattices resulting in a different degree of lattice relaxation lead also to a different height of interface roughness. The lateral and vertical correlation lengths of the roughness decrease with increasing relaxation of the superlattice. The vertical correlation length corresponds to an almost complete correlation of different interfaces in the case of the nearly perfect superlattice with InSb‐like interfaces. © 1996 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:79 ,  Issue: 1 )