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The effects of ion species and target temperature on topography development on ion bombarded Si

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4 Author(s)
Carter, G. ; Science Research Institute, University of Salford, Salford M5 4WT, United Kingdom ; Vishnyakov, V. ; Martynenko, Yu.V. ; Nobes, M.J.

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The production of periodic ripple or wavelike structure by Si+, Ne+, Ar+ and Xe+ high‐fluence ion bombardment at 20 and 30 keV of Si at 45° incidence angle and at target temperatures from 120 K to room temperature and observed by scanning electron and atomic force microscopy is described. Different species exhibit different behaviors at different temperatures with Xe+ producing transverse wave structures at room temperature and below, Ar+ producing more patchy ripple structures, and Ne+ and Si+ only producing wave structures at low temperatures. Possible reasons for the different behavior include implant ion incorporation which mediates flow and stress relief in the amorphized near‐surface layer. © 1995 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:78 ,  Issue: 6 )

Date of Publication:

Sep 1995

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