Cart (Loading....) | Create Account
Close category search window

Transmission electron microscopy analysis of heavily As‐doped, laser, and thermally annealed layers in silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Dokumaci, O. ; 339 Larsen Hall, Department of Electrical Engineering, University of Florida, Gainesville, Florida 32611 ; Rousseau, P. ; Luning, S. ; Krishnamoorthy, V.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The extended defects in laser activated and subsequently thermally annealed high concentration arsenic layers have been investigated in a range of surface concentrations from 2.3×1020 to 1.9×1021 As/cm3 with transmission electron microscopy. We observe a rapid change in the density of dislocation loops with dose which is indicative of a homogeneous nucleation mechanism. The number of atoms bound by the defects is insufficient to account directly for all of the inactive arsenic. The defects lie uniformly inside the As layer up to the junction depth, which suggests that As inactive complexes are aiding the loop formation. Our results support the proposition that arsenic deactivation injects silicon interstitials. © 1995 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:78 ,  Issue: 2 )

Date of Publication:

Jul 1995

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.