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Temperature and strain dependence of the roughening transition in III‐V semiconductor and SiGe epitaxial growth

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6 Author(s)
Bangert, U. ; Department of Pure and Applied Physics, UMIST, Manchester M60 1QD, England ; Harvey, A.J. ; Dieker, C. ; Hartdegen, H.
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Experimental and theoretical evidence is given for the occurrence of a temperature and strain dependent roughening transition from two dimensional (2‐D) monolayer to 3‐D island growth in strained III‐V compound ternary alloys and GeSi. For sufficiently large strain energy values the shape of the transition curve was found to follow a T∼ϵ-2f relationship, as predicted from classical nucleation theory arguments, where T is the growth temperature and ϵf the areal misfit strain energy. The asymptotic behavior in the zero strain energy regime could be reproduced by an empirical curve of a more complex expression. The transition curve appears to separate routes of strain relief in the above systems, which were found to predominantly follow 3‐D island formation in the higher, and misfit dislocation formation in the lower growth temperature/strain regime. © 1995 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:78 ,  Issue: 2 )

Date of Publication:

Jul 1995

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