By Topic

Cross‐sectional photoluminescence and its application to buried‐layer semiconductor structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Schaafsma, D.T. ; National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80303Department of Physics, University of Colorado, Boulder, Colorado 80309 ; Christensen, D.H.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We present an overview of a cross‐sectional scanning microphotoluminescence technique that is used to examine various buried‐layer semiconductor structures for which traditional surface‐normal techniques cannot yield sufficient information or must be coupled with time‐consuming and painstaking processes such as wet etching. This technique has a wide range of applications; two—defect‐driven interdiffusion in quantum wells and the modification of spontaneous emission from quantum wells in vertical‐cavity surface‐emitting lasers (VCSELs)—are discussed here. The data obtained using this method can be used to distinguish emission spectra from quantum wells as little as one micrometer apart in depth and a few nanometers different in wavelength. The comparison of normal incidence with cross‐sectional data from VCSELs can be used to more effectively optimize the match between cavity resonance and quantum well emission in high‐Q devices. © 1995 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:78 ,  Issue: 2 )