Cart (Loading....) | Create Account
Close category search window

Initial velocity effect on space‐charge‐limited currents

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Liu, Shengyi ; Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 ; Dougal, R.A.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The characteristics of a monopolar space‐charge region under the effect of charge injection with a uniform initial velocity are studied. Poisson’s equation has been solved as a Dirichlet boundary‐value problem, other than by conventional serial integrations, to yield exact analytical expressions for the potential, field, charge density, and current. The structure of the space‐charge region is characterized by a potential well and an effective diode gap, and can be explained in terms of the initial kinetic energy of the charge. The Child–Langmuir limit, when calculated by using the effective diode gap, is a firm limit. © 1995 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:78 ,  Issue: 10 )

Date of Publication:

Nov 1995

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.