Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.360587
Electro‐optic properties of thin‐film materials grown on opaque substrates are determined utilizing the principles of reflection differential ellipsometry. The scheme of the measurement involves the detection of the field‐induced phase shift in a probing light beam reflected from thin‐film samples. To quantitatively determine the field‐induced indices change or birefringence and the field‐induced strain it is essential to model the differential ellipsometric process in the stratified structure. The modeling reveals that the field‐induced changes of the ordinary and the extraordinary indices contribute to the measured phase shift with different incident‐angle dependences. The field‐induced strain gives yet another unique incident‐angle distribution. By means of an incident‐angle‐varying technique, therefore, the field‐induced changes of ordinary index and extraordinary index in a thin‐film material may be determined separately. Detailed descriptions of the measuring technique and the modeling work are presented. © 1995 American Institute of Physics.