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III–V/SOI heterogeneous photonic integrated devices for optical interconnection in LSI

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3 Author(s)
Nishiyama, N. ; Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Okayama ; Maruyama, T. ; Arai, S.

InP-based photonic devices on SOI substrate using bonding technologies were demonstrated. Direct bonding and BCB bonding enable us to realize high optical confinement DFB lasers and other devices for intra/inter-chip connection in Si LSI circuit. Low threshold optical pumped membrane lasers and CW-operation of lateral current injection lasers with thin lateral cladding lasers were realized.

Published in:

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Date of Conference:

10-14 May 2009