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Sub-MMW active integrated circuits based on 35 nm InP HEMT technology

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9 Author(s)
Lai, R. ; Northrop Grumman Space Technol., Redondo Beach, CA ; Deal, W.R. ; Radisic, V. ; Leong, K.
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In this paper, we present the latest advancements of active sub-MMW integrated circuits (S-MMIC) based on 35 nm InP HEMT technology. The current state-of-the-art results include the first demonstrated LNA, PA and fundamental oscillator modules above 300 GHz.

Published in:

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Date of Conference:

10-14 May 2009

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