By Topic

Sub-MMW active integrated circuits based on 35 nm InP HEMT technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Lai, R. ; Northrop Grumman Space Technol., Redondo Beach, CA ; Deal, W.R. ; Radisic, V. ; Leong, K.
more authors

In this paper, we present the latest advancements of active sub-MMW integrated circuits (S-MMIC) based on 35 nm InP HEMT technology. The current state-of-the-art results include the first demonstrated LNA, PA and fundamental oscillator modules above 300 GHz.

Published in:

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Date of Conference:

10-14 May 2009