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We report the development of high performance InP high electron mobility transistors (HEMTs) supported with three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. Depletion and enhancement mode devices with 35 nm gate-lengths are available with fT / fmax of 536/307 GHz and fT/fmax of 550/346 GHz, respectively. The process shows excellent device uniformity, yield, and reliability. The technology was used to demonstrate broadband feedback-linearized amplifiers with 20 dB S21 gain and an OIP3 of 37 dBm at 2 GHz operation, where PDC is only 313 mW.