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Nano-electronics of high κ dielectrics on InGaAs for key technologies beyond Si CMOS

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11 Author(s)
Lin, T.D. ; Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu ; Chang, P. ; Chiu, H.C. ; Chang, Y.C.
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The surface Fermi level unpinning in InGaAs has been realized with high kappa dielectric growth using molecular beam eitaxy (MBE) and atomic layer deposition (ALD). Furthermore, world-record device performances in self-aligned inversion-channel InGaAs MOSFET and a capacitance equivalent thickness (CET) of les 1 nm in Ga2O3(Gd2O3) and ALD-HfO2 on InGaAs have been achieved.

Published in:

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Date of Conference:

10-14 May 2009

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