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26 Gbit/s Direct Modulation of AlGaInAs/InP Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer

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9 Author(s)
Yagi, H. ; Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yokohama ; Koyama, K. ; Onishi, Y. ; Yoshinaga, H.
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26 Gbit/s direct modulation of 1.3degm wavelength AlGaInAs/InP distributed feedback lasers with the ridge-waveguide structure (ridge width of 1.0degm) buried by the benzocyclobutene polymer was achieved. The high electrical bandwidth of more than 20 GHz was acquired with this ridge-waveguide structure. Consequently, a clear eye-opening with extinction ratio of 6 dB was confirmed in the measurement temperature of 25degC.

Published in:
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Date of Conference: 10-14 May 2009

Page(s):
371 - 374
ISSN :
1092-8669
E-ISBN :
978-1-4244-3433-6
Print ISBN:
978-1-4244-3432-9
INSPEC Accession Number:
10688343
Conference Location :
Newport Beach, CA
Digital Object Identifier :
10.1109/ICIPRM.2009.5012445
Product Type:
Conference Publications

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