By Topic

Optimization of 1550nm InAs/InP Quantum Dash and Quantum Dot based semiconductor optical amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Pommereau, F. ; III-V Lab., Alcatel-Thales, Marcoussis ; Brenot, R. ; Rousseau, B. ; Martin, F.
more authors

We demonstrate that the combination of Quantum Dots and Quantum Dashes (QD) structures with buried ridge stripe technology allows to achieve QD semiconductor amplifier (SOA) with an internal gain of 30dB for an injected current of 350 mA. Using optimized taper configuration, the beam divergence and the coupling losses are reduced down to 18degtimes22deg and ~ 3 dB, respectively. It opens the way to an investigation of nonlinear properties and wavelength conversion scheme in high gain QD-SOA and to a fair comparison with SOA based on conventional bulk or multiple quantum wells material.

Published in:

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Date of Conference:

10-14 May 2009