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In recent years, the theories and technologies of optically pump photonic crystal (PC) devices, such as PC lasers and single photon sources, have been investigated extensively. However, progress on electrically driven PC devices has not been as successful. In 2004, Park et al. demonstrate an electrically driven PC laser, which has a sub-micrometer semiconductor post at the center of the single cell PC cavity . The central post acts as an electrical conduction channel as well as a heat sinker nicely. On the other hand, to achieve efficient PC devices, such as lasers and single photon sources, PC cavities with not only high Q values but also small mode-volumes (Vm) are necessary. Among the reported PC cavities, L3 cavity, modified-H1 cavity, and quasi-L2 (qL2) cavity are good candidates for realizing high efficiency PC devices [2~4]. Both the L3 and modified-H1 cavities provide a central mode with very high Q values while the qL2 cavity has a dipole mode with an extremely small mode-volume (~0.019mum3) at the central region. Therefore, the characteristics of the aforementioned PC cavities would suffer from the presence of the central post in terms of mode confinement and integrity. In this work, we propose an oxygen-ion implantation method to replace the central post. An electrically driven InAs quantum dot (QDs) light-emitting diode with qL2 PC cavity is demonstrated.