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Heterogeneous integration of indium phosphide on silicon by nano-epitaxial lateral overgrowth

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5 Author(s)

InP on Si is grown by nano-epitaxial lateral overgrowth (nano-ELOG) on patterns consisting of net-type openings under different growth conditions. Analysis shows that net-type patterns yield large lateral growth rate and good optical quality. Different growth conditions have a substantial impact on growth rate and some effect on surface morphology, as well as on the optical quality. Optical quality is deemed to be affected partly by the amount of dislocations arising from the difference in thermal expansion coefficient between the mask and the InP layer, and partly by the layer thickness and surface morphology.

Published in:

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Date of Conference:

10-14 May 2009